摘要
利用分子束外延(MBE)方法研制出了高质量的InGaAs/GaAs/AlGaAs应变量子阱阵列激光器。其有源区采用分别限制单量子阱结构,激射波长在980nm左右,阵列器件由48个LD构成,在重复频率300Hz、脉冲宽度200μs的条件下,室温光功率输出达到20W,斜率效率1.1W/A,光电转换效率29%。
An high quality InGaAs/GaAs/AIGaAs strained quantum well laser array, which consists of 48 LD is grown by molecular beam epitaxy (MBE). The active region is composed of separate confinement quantum well structure with a lasing wavelength of around 980 nm. The output power of 20 W, rate of 300 Hz, pulse width of 200 μs are achieved at room temperature driven by a current of 17.5 A. The slope efficiency of the array is 1.1 W/A. The power efficiency is estimated to be about 29%.
出处
《光电子．激光》
EI
CAS
CSCD
北大核心
2003年第3期225-227,共3页
Journal of Optoelectronics·Laser
基金
吉林省科技发展计划资助项目(51456030201ZS3601)
关键词
阵列激光器
分子束外延
MBE
应变量子阱
分别限制
单量子阱
Fabrication
Molecular beam epitaxy
Semiconducting gallium arsenide
Semiconductor quantum wells
