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与CMOS工艺兼容的硅基光发射器件研究进展 被引量：2

Research Progress of Si Light Emitting Devices in Standard CMOS Technology
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摘要 本文概述了近年来该器件的研究与进展,从发光机理、器件研制和应用前景等方面做了详细的叙述。 The research progress of silicon LED in standard CMOS technology process was reported in this paper.The emission mechanism,device fabrication and application prospects were detailed.
作者 陈弘达 孙增辉 毛陆虹 崔增文 高鹏 陈永权 申荣铉
机构地区 中国科学院半导体研究所集成光电子学国家重点实验室 天津大学电子与信息工程学院
出处 《光电子．激光》 EI CAS CSCD 北大核心 2003年第3期327-330,共4页 Journal of Optoelectronics·Laser
基金 国家"863"计划资助项目(2001AA312080 2002AA312240 2001AA122032) 国家自然科学重大基金项目(69896260)
关键词 Si基光发射器件 LEP RBS P-N结 CMOS Si反偏P-n结 reverse bias silicom(RBS) p-n junction Si based LED LED based on RBS p-n junction(RBS-LED) CMOS
分类号 TN256 [电子电信—物理电子学] TN305 [电子电信—物理电子学]
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参考文献12

  • 1[1]R Newman.Visible light from a silicon p-n junction[J].Physics.Rev.,1955,100:700-703.
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同被引文献12

  • 1KOBRINSKY M J, BLOCK B A, ZHENG J, et al. On-chip optical interconnects [ J ]. Int Technology J, 2004,8 ( 2 ) : 129-142.
  • 2SNYMAN L W, AHARONI H, du PLESSIS M, et al. Increased efficiency of silicon light emitting diodes in a standard 1.2 micmncomplementary metal oxide semiconductor technology [J]. Opt Eng, 1998,37(7) :2133-2141.
  • 3NEWMAN R. Visible light from a silicon p-n junction [J]. Physical Review, 1955,100(2) :700-703.
  • 4AKIL N, KERNS S E, KERNS D V, et al. A multimechanism model for photon generation by silicon junctions in avalanche breakdown [ J]. IEEE Trans on ED, 1999,46(5) : 1022-1028.
  • 5CLAPS R, RAGHUNATHAN V, DIMITROPOULOS D, et al.Influence of nonlinear absorption on Raman amplification in Si waveguides [J]. Optics Express,2004,12(12) :2774-2780.
  • 6DIMITROPOULOS D, JHAVERI R, CLAPS R, et al. Lifetime of photogenerated carriers in silicon-on-insulator rib waveguides [ J ]. APL, 2005,86 (7) : 2745 -2747.
  • 7Kobrinsky M J, Block B A,Zheng J,et al. On-Chip Optical Interconnects [J]. Intel Technology Journal 2004,8 (2) : 129-142.
  • 8Newman R. Visible light from a silicon p-n junction[J]. Physical Review, 1955,100(2) : 700-703.
  • 9Akil N,Kerns S E,Kerns D V,et al. A multimechanism model for photon generation by silicon junctions in avalanche breakdown [J]. IEEE Transactions on Electron Devices. 1999,46 ( 5 ) : ]022-]028.
  • 10Hsiu-Chih Lee, Cheng-Kuang Liu. Si-based current-density-enhanced light emission and low-operating-voltage light-emitting/ receiving designs[J]. Solid-State Electronics, 2005,49 : 1172- 1178.

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光电子．激光
2003年 第3期

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