相变记录介质GaSb薄膜的光学性质、微观结构及其记录性质

Optical properties, microstructure and recording properties of phate change recording thin film GaSb prepared by RF-sputtering

本文系统地研究了热致相变对射频磁控溅射的GaSb薄膜光学性质和微观结构的影响.发现在270℃左右具有连续无序网络结构的非晶GaSb薄膜发生相变,转变为具有立方晶系的多晶薄膜,其晶格常数为α_0=0.6095nm,相变后薄膜的吸收减小,GaSb薄膜的光能隙由0.7eV升高为0.94eV.用精密四探针法测量了GaSb薄膜电阻随温度变化的过程.给出了GaSb薄膜的一次写入记录特性,研究了光致晶化记录畴的微结构.

Amorphous GaSb thin film have been prepared by rf-magnetron sputtering. The effects of ther mally-induoed phase change of the film on its optical properties and miorostruoture have been studied systematically. It is found that amorphous GaSb thin films change to polycrgstalline state with cubic structure (α0 = 0.6095 nm) around annealing temperature 270℃, and the optical gap changs from 0.7(eV) to 0.94 (eV) after the phase change. The cauve of GaSb thin film resistance versus annealing temperature is measured by fourprobe method. And write-once recording properties and laserinduoed phase change of the GaSb thin film have been studied.