GaAs半导体中三光子吸收系数的光学测量

Optical measurement of three-photon absorption coefficient in GaAs semiconductor

本文首次报道了采用非线性光透射技术(NLT)测量λ=2.06μm激光激发下GaAs本征半导体中三光子吸收的实验研究.观察到了三光子吸收及所伴随的自由载流子的激发态吸收,并测得了三光子吸收系数.实验测量结果与理论计算结果比较,符合较好.

Using the nonlinear transmission (NLT) technique, the experimental investigation on. tlsrce-photon absorption processes in GaAs intrinsic semiconductor illuminated by a pulsed laser at 2.06μm is firstly described in this paper. Three-photon absorption and subsequent excited state absorption of the generated electrons and holes have been observed. Three-photon absorption coefficient has been measured and the experimental result is in good agreement with the theoretical value.