半导体中多光子吸收跃迁速率的全量子理论分析

ALL-QUANTUM THEORETICAL ANALYSIS OF TRANSITION RATE FOR MUlTIPHOTON ABSORPTION IN SEMICONDUCTORS

本文从非线性光学中辐射跃迁速率的表达式出发,在全量子理论下,导出了半导体中任意阶多光子吸收跃迁速率的一般表达式。理论分析结果表明,n光子吸收跃迁速率与光强的n次方和n阶光子相干度成正比。本文在多能带及二能带理论模型下,对多光子吸收跃迁速率的一般表达式进行了化简,并对非线性相互作用项对跃迁速率的贡献,作了讨论。

Based on the all-quantum theory, the general expression of transition rate for an arbitrary order multiphoton absorption in semiconductors is calculated by use of the known radiation transition rate in nonlinear optics in this paper. It is showed that the n-photon absorption transition rate is proportional to the nth power of intensity and the nth order photon coherent degree. Using a multi-band model and a two-band model, the simplified expressions of transition rate for multiphoton absorption are separately given. And the contribution of nonlinear term in the interaction to the transition rate is discussed.