摘要
利用光调制反射谱(PR)对1.55μm应变层InCaAsP三量子阱激光器结构进行了研究,在样品的波导层观察到了Franz-Keldysh振荡。利用Bastard包络函数方法和Kane模型从理论上计算了该应变层InGaAsP四元合金三量子阱内电子和空穴的能级和跃迁能量,计算结果与实验数据符合得很好,得到了In_(0.758)Ga_(0.242)As_(0.83)P_(0.17)与In_(0.758)Ga_(0.242)As_(0.525)P_(0.475)四元合金应变界面的导带不连续性。
Photoreflectance (PR) has been employed to study the 1.55 uuuuum strained-layer InGaAsP triple-quantum-well laser structure. Franz-Keldysh oscillations (FKOs) from the waveguide layer of the laser structure have been found. The experimental optical transitions from the quantum-well active region are consistent well with the theoretical results calculated by utilizing the Bastard's method and the Kane's model. The interface band-offset of In0.758Ga0.242As0.83P0.17 and In0.758Gao0.242As0.525P0.475 has also been obtained.
出处
《微纳电子技术》
CAS
2003年第3期11-13,32,共4页
Micronanoelectronic Technology
