砷压热处理对半绝缘GaAs性能的影响

The Influence Upon SI GaAs's Character by Different Arsenic Pressure in the Process of Heat Treatment

采用 5种经不同砷压但相同生长温度 ( 1 0 0 0℃ )和时间 ( 5 h)处理的半绝缘 ( SI) Ga As样品 ,利用表面光伏 ( SPV)方法 ,测量和计算了 SI-Ga As在室温 ( 30 0 K)下的主要施主浓度 EL2 、禁带宽度 EgΓ和双极扩散长度 La,并从理论上给出了相应的解释 .

On the basis of the comparison on five kinds of SI GaAs sa mple through different arsenic pressure but same growth temperature(1000℃) and time(5 h) in the process of heat treatment,some important characteristic parameters for S I GaAs in 300 K have been measured and computed by the steady-state surface ph otovoltage method, the EL 2 concentr ation, the energy gap E gΓ and the ambipolar diffusion length L a . Furthermore, the experimented results are analyzed theoretically.