用0.35μm CMOS工艺实现存储接口单元中的数模混合DLL

Implementation of mixed DLL in the unit of memory interface with 0.35μm CMOS technology

论述了一种利用0.35mm、双阱、双层金属、双层多晶硅的CMOS工艺所实现的延迟锁定环(DLL)。该DLL用于RISC处理器中存储接口部件的时钟同步。本文介绍了其应用背景,给出了DLL的系统结构,接着分别介绍了鉴相器、电荷泵以及压控延迟线的电路结构,最后给出相关仿真结果。

A kind of DLL, which is fabricated with 0.35mm, double-well, double-metal, doublepoly-silicon CMOS technology is described in this paper. The DLL is used as clock synchronizerin the memory interface unit. The background, the system structure of the DLL, and the circuits offrequency-detector, charge-pump and VCDL are introduced.The related simulation results are alsogiven.