摘要
介绍了无铝激光器的优点 ;利用 LP-MOVPE生长了 In Ga As P/In Ga P/Ga As分别限制异质结构单量子阱 (SCH-SQW)结构 ,讨论了激光器的腔长对特征温度的影响。对于条宽 1 0 0 μm、腔长 1 mm腔面未镀膜的激光器 ,连续输出光功率为 1 .2 W,阈值电流密度为 41 0 A/cm2 ,外微分量子效率为 62 % ,并进行了可靠性实验。
InGaAsP/InGaP/GaAs SCH SQW lasers have been prepared by LP-MOVPE. The dependence of characteristics temperature ( T 0) on cavity length ( L) was discussed. The laser with 100 μm line width and 1 mm cavity length has output power of 1.2 W, threshold current density ( J th ) of 410 A/cm 2 and external differential efficiency ( η d) of 62% at laser wavelength of 808 nm. The experiments on the reliability were also carried out.
出处
《固体电子学研究与进展》
CAS
CSCD
北大核心
2003年第1期11-13,共3页
Research & Progress of SSE
