随机背景极化电荷对单电子电路影响的分析

Analysis of the Influence of Random Background Charge on SED Circuits

根据单电子现象的半经典理论 ,采用 Monte Carlo方法 ,对三种 SED电路进行模拟 ,结果发现 ,多岛单电子电路具有较强的抑制背景电荷极化效应的能力。

Based on the semi-classical theory of single electron phenomena, three circuits of SED were studied and compared with Monte Carlo simulation. The simulating results indicate that multi-islands single electron circuits is more robust to random background charge effects.