X波段功率异质结双极晶体管

X-band Power Heterojunction Bipolar Transistor

讨论了 X波段功率异质结双极晶体管 (HBT)的设计 ,介绍了器件研制的工艺过程及测试结果。研制的器件在 X波段功率输出大于 5 W,功率密度达到 2 .5 W/mm。采用 76mm圆片工艺制作 ,芯片的 DC成品率高于 80 %。

This paper describes the design, process and measured results of an X band power HBT. The power HBT has shown the saturated output popwer of more than 5 W with the maximum power density of more than 2.5 W/mm at frequency of 8 GHz. A DC on-wafer HBT yield of better than 80% was obtained in process by using 76 mm MOCVD wafers.