摘要
本文描述了高纯P-Ge晶体在正交脉冲电场和稳恒磁场中,由热空穴反转分布所引起的波长在很宽范围(约40～400μm)的受激辐射和激光作用。并介绍了这一领域的研究现状和发展前景。说明发展成连续可调的半导体远红外脉冲激光器是可能的。
In this paper, stimulated emission and a laser effect over a broad spectral range in the far infrared (about 40-400μm) which arise in hot holes population inversion in the pure p-type. Ge upon the application of strong, crossed a pulsed electric and a constant magnetic fields are described. Also are reported the present study and development in this field. We show the possibility of realizing a continue tunable farinfrared semiconductor pulsed laser.
出处
《激光杂志》
CAS
CSCD
北大核心
1989年第1期1-5,共5页
Laser Journal
