Si含量和基片温度对Ti-Si-N纳米复合薄膜的影响

Influences of Si Content and Substrate Temperature on Ti Si N Nanocomposite Films

通过多靶磁控反应溅射方法沉积了 Ti- Si- N系纳米复合薄膜 .采用电子能谱仪 (EDS)、X-射线衍射 (XRD)、透射电子显微镜 (TEM)、X-射线光电子能谱 (XPS)和显微硬度仪分析 Ti- Si- N系薄膜的微观结构和力学性能 ,以及基片温度对薄膜微结构和硬度的影响 .结果表明 ,薄膜中的 Si以非晶 Si3 N4形式抑制 Ti N晶粒的生长 ,使之形成纳米晶甚至非晶 ;薄膜硬度在 a(Si) =4.1 4 %时达到最大值 (36GPa) ,继续增加 Si的含量 ,薄膜硬度逐渐降低 .基片温度的提高减弱了 Si3 N4对Ti N晶粒长大的抑制作用 。

Ti-Si-N nanocomposite films were deposited by multi-target reactive magnetron sputtering. EDX, XRD, TEM, XPS and a microhardness tester were employed to characterize the microstructure and mechanical properties, as well as to investigate the influence of substrate temperature on these films. It reveals that in the form of Si3N4, Si exists at the boundaries of TiN grains, which strongly prevents the growth of TiN grains and causes TiN grains to form nanocrystalline or even amorphous; the hardness reaches the peak value (36 GPa) when α (Si)=4.14%. With the increase of Si content, the hardness of films decreases gradually. The enhancement of the substrate temperature weakens the restrain effect of Si on the growth of TiN grains, which shows a lower peak value and a slower decrease of hardness at the higher substrate temperature.