期刊文献+
任意字段
题名或关键词
题名
关键词
文摘
作者
第一作者
机构
刊名
分类号
参考文献
作者简介
基金资助
栏目信息

基于行波电极电吸收调制的高速光脉冲发生模块

High-speed Optical Pulse Generation Module Based on Traveling-wave Electro-absorption Modulation
下载PDF
导出
摘要 速率高于 40Gbit/s以上光脉冲发生器件是构建高速宽带光纤通信网络系统的关键 ,行波型电吸收调制器(TW EAM)与分布反馈激光器 (DFB LD)的单片集成技术代表该领域的最新发展方向。本文利用准静态等效电路模型对行波型电吸收调制器的微波特性进行了分析并与实验室的实际测量结果进行了比较 ,得到了比较满意的结果。介绍了TW EAMDFB A high bit rate more than 40 Gbit/s optical pulse generation device is the key to achieving high speed and broadband optical fiber communication network system. A traveling wave electro-absorption modulator integrated with a distributed feedback laser diodes presents the latest tendency at this domain. In this paper, a quasi state equivalent circuit model is used for examine the TW EAM microwave properties. Compared with the experiment results, it gets a satisfied conclusion. Finally, this article introduces the TW EAMDFB LD properties and the recent research achievements.
作者 朱建彬 蔡纯 肖金标 张夕飞 张明德 孙小菡
机构地区 东南大学电子工程系
出处 《电子器件》 CAS 2003年第1期60-65,共6页 Chinese Journal of Electron Devices
关键词 高速光脉冲 集成芯片 电吸收调制器(EAM) 行波电极 分布反馈激光器(DFB-LD) high-speed optical pulse integrated chip electro-absorption modulator traveling-wave electrode distributed feedback laser diodes
分类号 TN76 [电子电信—电路与系统] TN78 [电子电信—电路与系统]
  • 相关文献

参考文献20

  • 1[1]Chuang S L. Physics of Optoelectronics Devices[ M]. John Wiley & Sons, 1995;Chapter 11.
  • 2[2]Agrawal G P. Dutta N K. Semiconductor Lasers, second editiou[ M] . Van Nostrand Reinhold. 1993:231 - 311 .
  • 3[3]Chang Shih-Jung ,Tsai Ching-Long , Lin Yih - Bin, Wang Way-Seen, Improved Electrooptic Modulator with Ridge Structrue in X-Cut LiNbO3 [J], J Lightwave Technol, May1999; 17(5)
  • 4[4]Saeko Oshiba, Koji Nakamura, Hideaki Horikawa, LowDrive-Voltage MQW Electroabsorption Modulator for Optical Short- Pulse Geueration[ J]. IEEE J Quantum Electronics,Feb 1998;34(2)
  • 5[5]Wooten Ed L, Kissa K. M, Yi- an A, et al. A review of lithium niobate modulator for fiber-optic communications systcms[J]. IEEE J Selected Topics in Quantum Electronics,2000; 6 ( 1 ): 69 - 2000.
  • 6[6]Walker R. G, High-speed Ⅲ-Ⅴ semiconductor intensity modulators[ J] . IEEE J Quantum Electronics, 1991; 27 (3):654 - 667
  • 7[7]Wang S Y, and Lin S H, High speed Ⅲ-Ⅴ Electrooptic waveguide modulators at λ＝ 1.3μm[ J]. J Lightwave Technology, 1988 ;6(6) :758 - 771
  • 8[8]Walker R G. Broadband (6 GHz) GaAs/GaAlAs electro-optic modulator with low driver power[ J]. Appl Phy Lett, 1989;54:1613- 1615
  • 9[9]Goossen K W, Cunningham J E, Jan W Y. On the Operational and Manufacturing Tolernances of GaAs-AlAs MQW Modulators [ J ] . IEEE J Quantum Electronics, 1998; 34 (3)
  • 10[10]Takayuki Yamanaka. Ultrafast Electroabsorption Modulator with Traveling-Wave electrodes [ C ]. In: Proc 27th Eur.Conf. on Opt. Comm. (ECOC' 01- Amsterdam) .
电子器件
2003年 第1期

相关作者

内容加载中请稍等...

相关机构

内容加载中请稍等...

相关主题

内容加载中请稍等...

浏览历史

内容加载中请稍等...
;
使用帮助 返回顶部