(NH_4)_2S_x溶液改善GaAs MESFETs击穿特性的机理研究

Mechanisms for the Improvement of Breakdown Characteristics of GaAs MESFETs Using (NH_4)_2S_x Treatment

使用 (NH4) 2 Sx 溶液对GaAsMESFETs进行处理。处理后 ,器件各栅偏压下的源漏饱和电流降低了 ,栅漏击穿电压有了显著提高。我们认为负电荷表面态影响着栅边缘的电场 ,负电荷表面态密度的增大会提高器件的击穿电压 ,这就是 (NH4) 2 Sx

A (NH 4) 2S x solution treatment technique was applied to GaAs metal semiconductor field effect transistors(MESFETs). The saturation drain current at each gate bias decreased while the gate to drain breakdown voltage increased remarkably with the (NH 4) 2S x treatment. It is negatively charged surface states to affect the electric field at the gate edge. Increased negatively charged surface states density produces increased breakdown voltage. This is the reason for the improvement of breakdown characteristics of GaAs MESFETs using (NH 4) 2S x treatment.