a-SiC:H薄膜的中子辐照研究

Irradiation effect of neutrons on a-SiC:H films

用射频(13.56MHz)反应溅射法制备了a SiC:H薄膜,并将制得的薄膜采用高能中子(14MeV)进行辐照。采用电阻率、Raman谱及红外光谱对薄膜的结构与特性变化规律进行了表征。分析结果表明:所得a SiC:H薄膜中存在多余的非晶态碳。随着中子辐照剂量的增加,a SiC:H薄膜中SP2C=C键增加,即其中的碳存在类石墨化的趋势。中子辐照后薄膜的电阻率的略微减小现象,可用缺陷对载流子的捕获模型进行解释。

Amorphous hydrogenated silicon carbide (a-SiC:H) films were prepared by the reactive sputtering method, which were irradiated by high energy neutrons. Using resistivity, Raman scattering, and infrared transmission spectroscopy, the authors investigated the neutrons irradiation effect on the structure and properties of a-SiC:H films. There were superfluous carbon in the films. It is found that the increase of irradiation does results in the increase of SP2C=C bonds in a-SiC:H films, i.e. the carbons in the films tended to graphitization. In general, the graphitization of carbon led to the decrease of resistivity sharply, but the decrease of resistivity in this paper was smooth. The phenomenon can be interpreted according to the model that the carriers were trapped by the defects.