新工艺生长的InGaN量子点的结构与电学性质研究

Structure and I-V characteristics of InGaN quantum dots grown by a new method

利用金属有机化学气相沉积(MOCVD)技术,采用一种称为低温钝化的新生长方法成功地生长出多层InGaN/GaN量子点。这种方法是对GaN表面进行钝化并在低温下生长,从而增加表面吸附原子的迁移势垒。采用原子力显微镜清楚地观察到该方法生长的样品中岛状的量子点。从量子点样品的I-V特性曲线观察到了共振隧穿引起的负阻效应,其中的锯齿状峰形归因于零维量子点的共振隧穿。

A new method was adopted to grow multi-sheet InGaN/GaN quantum dots successfully by metalorganic chemical vapor deposition (MOCVD). The new method can be called passivation low-temperature method which can increase the energy barrier of adatom hopping by surface passivation andlow temperature of growth. The island shaped InGaN quantum dots are revealed by atomic force micro-scopy. Negative differential resistance effect by resonant tunneling can be observed from the I-V characteristics of the 4-sheet InGaN/GaN quantum dots, the indent peaks in which are attributed to resonant tunneling of the zero-dimensional states in the InGaN quantum dots.