PIN结构GaInAsSb红外探测器的PSPICE模型

PSPICE model of GaInAsSb infrared detectors with PIN structure

研究了PIN结构GaInAsSb红外探测器的暗电流特性,建立了器件的PSPICE模型。模拟结果与实际测试结果基本符合。计算结果表明,器件表面和内部的缺馅及表面复合电流对器件的反向特性起主要作用,当反向偏压大于0.35V,缺陷引起的隧穿电流对器件暗电流起主要作用。

Dark current of GaInAsSb Detectors with PIN structure was studied, and PSPICE model ofthe devices was set up. Simulated results coincide with tested results. Calculation shows that the elements dominated reverse characteristics of the devices are G-R current and surface recombinationcurrent, and when the reverse voltage is higher than 0.35V, trap assisted tunneling current dominatesdark current of the devices.