GaAs霍尔开关集成电路的研制

Design of GaAs integrated hall switch

成功地设计并制造出GaAsMESFET霍尔开关集成电路。该电路采用了方形霍尔元件,绝对灵敏度为704mV/T;信号处理电路由差分放大电路和触发电路组成,触发电路结构类似于SCFL的D触发器。结果表明,开关性能良好,工作点合理,达到设计要求。实验结果还表明,霍尔元件和放大电路可构成灵敏度很高的霍尔线性集成电路。

The integrated Hall-effect switch was designed and fabricated by using traditional GaAs depletion IC process technology. A square shape Hall plate was incorporated into the conditioning circuit.The absolute sensitivity of the Hall plate is around 704mV/T at 3V bias voltage. The conditioning cir-cuit consists of a differential amplifier and a flip-flop circuit. The flip-flop circuit has little changefrom SCFL D flip-flop. Through the test, the switch shows a quite good performance and reasonable work points.Furthermore, the hall plate and amplifier also form a linear Hall sensor with high sensitivity.