摘要
为了解决化学气相沉积金刚石膜产业化进程中存在的生长速率慢、沉积尺寸小的难题,自行研制了适宜于大尺寸金刚石膜高速生长的电子辅助热灯丝式化学气相沉积(EAHFCVD)装置,通过反应气体中加氧将碳源浓度提高到10%以上,并优化反应压力与直流偏流密度二参数间的匹配,研究了该装置的生产特性,同时利用SEM、XRD和Raman光谱对沉积的金刚石膜进行了分析表征.研究结果表明,应用该装置高质量金刚石膜的沉积尺寸可达100mm以上,生长速率达到约10μm/h的水平,并制备出100mm×1 5mm的完整金刚石自支撑膜片,该技术可满足产业化生产的要求.
In order to overcome the problems of low growthrate and small depositional area in the industrializing process of CVD diamond films, a special Electron Assistant Heatfilament Chemical Vapor Deposition equipment has been developed successfully. On this set of equipment, synthesizing procedures of diamond films were optimized systematically, and the deposited films were characterized by SEM, XRD and Raman spectrometry. The results show that the growth rate of high quality large size (≥100 mm) diamond film may reach the level of about 10 μm/h through the addition of O2, increasing the concentration of CH4 up to 10% in reaction gas, as well as optimizing the reaction pressure and direct current density. Finally, a sheet of selfstanding thick film with 100 mm in diameter, 15 mm thickness has been prepared.
出处
《材料科学与工艺》
EI
CAS
CSCD
2003年第1期30-33,共4页
Materials Science and Technology
基金
九五"国家重点科技资助项目(军转民)(J9503)
国家自然科学基金资助项目(10275046).