摘要
GaN材料以其优良的光电性质,已成为制造发光器件和高温大功率器件的最有前途的材料。欧姆接触是制备GaN基器件的关键技术之一。着重论述了在n-GaN和p-GaN上制备欧姆接触的研究现状。
Gallium nitride has become one of the most attractive materials for light emitting devices and high-temperature and high-power devices,due to its superior opto-electronic properties. Ohmic contact is a critical technology for preparing GaN based devices. In this paper,research progress in ohmic contacts in n-GaN and p-GaN is presented emphatically.
出处
《材料导报》
EI
CAS
CSCD
2003年第3期38-40,44,共4页
Materials Reports
基金
国家重大基础研究项目基金(编号No.G2000068306)
