摘要
用Czochralsky方法和铱坩埚感应加热技术生长出了尺寸为φ35mm×40mm的掺铈硅酸镥(LSO:Ce)闪烁晶体.透射光谱表明,由于铈离子的掺入,使晶体的吸收边由纯LSO晶体的195nm红移至380nm.LSO:Ce晶体的紫外激发波长按强度递减的顺序依次为380、333、319和216nm,其光发射为带状谱,波长覆盖范围从390nm至560nm.X射线激发的发射谱具有典型的双峰特征,峰值波长为393nm和.426nm.这些特征与Ce3+离子基态能级4f1因自旋-轨道耦合而产生的两个分裂能级和Ce+离子在LSO晶体中占据两个不同的结晶学格位有关.
Cerium-doped lutetium oxyorthosilicate (LSO) crystal with the dimension of phi35mm x 40mm was grown by using the Czochralsky method. Due to cerium ion doping, its absorption edge shifts from 195nm of undoped LSO crystal to 380nm. The intensities of ultraviolet excitation wavelength of LSO:Ce decrease by degrees of 380,332,319 and 216nm. The emission of LSO:Ce crystals has the characteristic of band emission and the emission wavelength spans from 390nm to 560nm. The X-ray excited emission also has band characteristics with two peaks of 390 and 426nm. These luminescence properties are related to the electronic transition of Ce3+ ion from its excited 5d levels to two split ground state levels of 4f as well as the existence of two luminescence centers of Ce3+ ion in LSO lattice.
出处
《无机材料学报》
SCIE
EI
CAS
CSCD
北大核心
2003年第2期269-274,共6页
Journal of Inorganic Materials
基金
上海市科技发展基金(011461062)
关键词
硅酸镥
光透射
激发
发射
lutetium orthosilicate
crystal growth
emission
excitation
