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溅射后退火反应法制备GaN薄膜的结构与发光性质 被引量：4

Preparation and Properties of GaN Films on GaAs (110) Substrates
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摘要 报道了用溅射后退火反应法在 Ga As (110 )衬底上制备 Ga N薄膜 .XRD、XPS、TEM测量结果表明该方法制备的 Ga N是沿 c轴方向生长的六角纤锌矿结构的多晶薄膜 .PL测量结果发现了位于 36 8nm处的室温光致发光峰 . High quality GaN films are prepared by sputtering post annealing reaction technique on GaAs (110) substrates.Measurement results by XRD,XPS,and TEM indicate that the polycrystalline crystal GaN with hexagonal structure is successfully grown.An intense room temperature photoluminescence peak at 368nm of the films is observed.
作者 杨莺歌 马洪磊 薛成山 庄惠照 郝晓涛 马瑾
机构地区 山东大学物理与微电子学院 山东师范大学半导体研究所
出处 《Journal of Semiconductors》 EI CAS CSCD 北大核心 2003年第4期387-390,共4页 半导体学报（英文版）
基金 国家自然科学基金资助项目 (批准号 :67710 0 6)~~
关键词 溅射 退火 GAN薄膜 结构 光致发光 氮化镓(110)晶面 GaN films GaAs (110) substrates photoluminescence sputtering post annealing reaction technique
分类号 TN304.23 [电子电信—物理电子学]
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参考文献18

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同被引文献34

  • 1高海永,庄惠照,薛成山,王书运,董志华,李忠.氮化Si基ZnO/Ga_2O_3制备GaN薄膜[J].微纳电子技术,2004,41(6):26-29. 被引量：1
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引证文献4

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Journal of Semiconductors
2003年 第4期

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