摘要
在不同弹性抛光布、不同氧化浓度、不同 p H值的抛光液等条件下进行了化学机械抛光试验 ,并用 TEM测量了晶片亚表面损伤层厚度 .研究发现抛光布的弹性及抛光液的氧化和化学去除能力决定了 Ga As抛光晶片的亚表面损伤层深度 。
Many experiments of chemical mechanic polishing are done by means of different compressibility pad,polishing slurry with different oxidant concentration,and different pH value.After polishing,the sub surface damage of wafer is measured by TEM.It is found that the depth of sub surface damage is determined by compressibility of pad,oxidant concentration and pH value of slurry.
