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CdSe探测器的制备与性能 被引量:2

Preparation and properties of CdSe detectors
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摘要 通过测定CdSe室温核辐射探测器的伏安曲线和能谱特性,对探测器制作过程中的表面处理工艺进行了初步研究,结果表明通过适当的表面腐蚀和钝化处理,可以降低表面漏电流,减小探测器噪声,达到提高探测器能量分辨率的目的。 A study on the etching and passivation of CdSe wafers in the preparing process of CdSe detectors has been made by measuring the I—V curves and the ?ray spectra. The results indicate that the surface leakage current can be decreased only when proper etching and passivation have been employed, and meanwhile electric noise can also be suppressed and consequently the energy resolution of CdSe detectors can be improved.
出处 《核技术》 CAS CSCD 北大核心 2003年第4期325-328,共4页 Nuclear Techniques
基金 教育部重点科技项目 高等学校骨干教师资助项目(1998-121)
关键词 CdSe探测器 I—V曲线 γ射线能谱 能量分辨率 半导体探测器 性能 CdSe detectors, I—V curves,-ray spectrum, Energy resolution
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  • 1Burger A, Shiio I, Schieber M. IEEE Trans Nucl Sci, 1983,NS-30(1):368-370
  • 2Armantrout G A, Swierkowski S P, Sheroman J M, et al.IEEE Trans Nucl Sci, 1997, NS-24(1):121-125
  • 3Burger A, Chen H, Chattopadhyay K, et al. Part of the SPIE conference on Hard X-ray and Gamma ray detector physics and applications, San Diego, California, July 1998 Vol. 3446. 0227 - 786x/98:154-158
  • 4Serreze H B, Entine G, Bell R O, et al. IEEE Trans Nucl Sci, 1974, 21:404-406
  • 5邵双运 朱世富 赵北君 等.人工晶体学报,2001,30(3):115-118.
  • 6Roth M, Burger A. IEEE Trans Nucl Sci, 1986, 33(1):407-410
  • 7Bertolini G, Coche A. Semiconductor Detector, 1968, 455
  • 8Slap M. Huth, Siebt G C. IEEE Trans Nucl Sci, 1976,1:102-108
  • 9Chen H, Hayes M, Ma X, et al. Part of the SPIE conference on Hard X-ray and Gamma ray detector physics and applications San Diego, California, July 1998 Vol.3446.0227-786x/98:17-28

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