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New type X—ray mask fabricated using inductvely coupled plasma deepetching

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摘要 The fabrication of X-ray masks is a critical and challenging process in LIGA technique.As inductively coupled plasma(ICP) deepetching appears to be the most suitable source for deep silicon etching,we fabricated a new type X-ray mask using this technique.In comparison with other types of X-ray masks,the mask we fabricated has the advantages of its low cost and its simple fabrication process.Besired microstructures have also been fabricated using this new type X-ray mask in LIGA technique.
出处 《Beijing Synchrotron Radiation Facility》 2001年第2期100-103, ,共4页 北京同步辐射装置(英文版)
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