高可靠性晶体管发辉现象的机理分析与测试安全

Mechanism analysis and solution of testing safety of high reliable transistor sparkling phenomena

通过对高可靠性晶体管 Vcbo击穿特性发辉现象的失效问题的实验对比分析和物理机理的研究 ,找出了产生此现象的直接原因 ,进而通过对晶体管安全工作方面的实验和研究 ,提出解决发辉现象的措施和测试 Vcbo单结特性时应注意的问题 ,确保了产品的可靠性 .

By experiment analysis and physical mechanism study, the direct cause of sparkling phenomena of V cbo breakdown characteristic of high reliable transistor had been identified, and the solution of the sparkling phenomena and the problems for testing of V cbo single junction characteristic were presented to ensure the product's reliability.