摘要
对在Si(100)基底上利用化学汽相沉积(CVD)法制备的金刚石膜,采用X 射线衍射(XRD)技术和正电子湮没谱学(PAS)原理进行了有关物相成分和微结构的测量分析.研究发现,在金刚石膜中微观缺陷的产生取决于薄膜生长过程的控制和基底表面局域生长环境的条件差异.结果表明,金刚石膜体和表面的结晶、微晶和非晶结构与正电子谱分析的3种正电子态相符合.
Using Xray diffraction technique and positron annihilation lifetime spectroscopy, we have measured the specimen phases compositions and microstructures of the diamond films fabricated on the Si(100) substrate with the chemical vapour deposition(CVD) method. Available Xray diffraction patterns were probed by using the JCPDSICDD powder diffraction database as original by means of search/match procedures. Positron lifetimes of diamond films have been analyzed with the RISOPATFIT88 programs. Micro defects in crystalline grains, crystallites noncrystalline phases and interface in the diamond films were found to depend on the processes in which the films are generated.
出处
《西南师范大学学报(自然科学版)》
CAS
CSCD
北大核心
2003年第2期227-229,共3页
Journal of Southwest China Normal University(Natural Science Edition)