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自组织生长单层InAs量子点结构中浸润层与量子点发光的时间分辨谱研究 被引量：2

Studies on Time-resolved Photoluminescence Spectrum of Wetting Layer and Quantum Dots in the Structure of Self-organized Quantum Dots
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摘要 在GaAs(100)的衬底上,采用MBE自组织方法生长了单层层厚分别为2和2.5 ML,的InAs层。通过原子力显微镜(AFM)观察,证实已在InAs层中形成量子点.采用光致发光谱及时间分辨谱对InAs量子点及浸润层开展研究和对比,分析了单层InAs量子点和浸润层中的载流子迁移过程,较好地解释了实验结果. Single InAs layers (2 and 2.5 ML thick, respectively) were grown on (001) GaAs substrate by molecular-beam epitaxy (MBE). Formation of quantum dots was verified by atomic force microscopy (AFM). We studied and compared InAs quantum dots and wetting layer by photoluminescence and time-resolved spectrum. Migration of carriers among quantum dots and wetting layer were investigated, which explained our results well.
作者 孔令民 蔡加法 陈主荣 吴正云 牛智川
机构地区 厦门大学物理系 中国科学院半导体所半导体超晶格国家重点实验室
出处 《量子电子学报》 CAS CSCD 北大核心 2003年第2期208-212,共5页 Chinese Journal of Quantum Electronics
关键词 INAS量子点 浸润层 时间分辨谱 半导体超薄层生长技术 砷化铟 InAs quantum dots wetting layer time-resolved spectrum
分类号 TN304.23 [电子电信—物理电子学] O433.59 [机械工程—光学工程]
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二级参考文献1

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同被引文献30

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量子电子学报
2003年 第2期

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