摘要
针对界面态密度在禁带中的不均匀分布 ,分析了界面态电荷对n沟 6H碳化硅MOSFET场效应迁移率的影响 .分析结果显示 ,界面态电荷使n沟碳化硅器件的场效应迁移率明显降低 .
The effect of interface state charges on the field-effect mobility of n-channel 6H-SiC MOSFET is analyzed based on the non-uniform distribution of interface state density in the energy gap. The results of the analysis show that interface state charges have the influence of lowering the field-effect mobility in n-channel SiC MOSFET. A relationship has been established between the ratio of the experimentally determined field-effect mobility to the inversion-layer carrier mobility and interface states.
出处
《物理学报》
SCIE
EI
CAS
CSCD
北大核心
2003年第4期830-833,共4页
Acta Physica Sinica