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界面态电荷对n沟6H-SiC MOSFET场效应迁移率的影响 被引量：4

Study of the effect of interface state charges on field-effect mobility of n-channel 6H-SiC MOSFET
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摘要 针对界面态密度在禁带中的不均匀分布 ,分析了界面态电荷对n沟 6H碳化硅MOSFET场效应迁移率的影响 .分析结果显示 ,界面态电荷使n沟碳化硅器件的场效应迁移率明显降低 . The effect of interface state charges on the field-effect mobility of n-channel 6H-SiC MOSFET is analyzed based on the non-uniform distribution of interface state density in the energy gap. The results of the analysis show that interface state charges have the influence of lowering the field-effect mobility in n-channel SiC MOSFET. A relationship has been established between the ratio of the experimentally determined field-effect mobility to the inversion-layer carrier mobility and interface states.
作者 汤晓燕 张义门 张玉明 郜锦侠
机构地区 西安电子科技大学微电子研究所
出处 《物理学报》 SCIE EI CAS CSCD 北大核心 2003年第4期830-833,共4页 Acta Physica Sinica
关键词 界面态电荷 碳化硅 反型层迁移率 场效应迁移率 界面态密度 载流子 n沟碳化硅器件 MOSFET silicon carbide interface state inversion-layer mobility field-effect mobility
分类号 O472 [理学—半导体物理]
  • 相关文献

参考文献11

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共引文献14

同被引文献25

  • 1徐静平,李春霞,吴海平.4H-SiC n-MOSFET的高温特性分析[J].物理学报,2005,54(6):2918-2923. 被引量：10
  • 2王超,张义门,张玉明.Electrical and optical characteristics of vanadium in 4H-SiC[J].Chinese Physics B,2007,16(5):1417-1421. 被引量：2
  • 3郭辉,张义门,乔大勇,孙磊,张玉明.The fabrication of nickel silicide ohmic contacts to n-type 6H-silicon carbide[J].Chinese Physics B,2007,16(6):1753-1756. 被引量：2
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  • 5Jinxia Gao, Yimen Zhang, Yuming Zhang.Fabrication of 4H- SiC Buried-Channel nMOSFETs[J].Chinese Journal of Semiconductors, 2004,25 (12) : 1561 - 1566.
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引证文献4

二级引证文献20

物理学报
2003年 第4期

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