AlGaAs/InGaAs/GaAs赝配高电子迁移晶体管的kink效应研究

Study on the kink effect in AlGaAs/InGaAs/GaAs PHEMTs

利用二维器件模拟软件MEDICI对AlGaAs InGaAs GaAs赝配高电子迁移晶体管器 (PHEMT)件进行了仿真 ,研究了PHEMT器件的掺杂浓度与电子浓度分布 ,PHEMT器件内部的电流走向及传输特性 ,重点研究了不同温度和不同势垒层浓度情况下PHEMT器件的kink效应 .研究结果表明 :kink效应主要与处于高层深能级中的陷阱俘获 反俘获过程有关 。

In this paper, two-dimensional devices simulation program-MEDICI has been used to simulate AlGaAs/InGaAs/GaAs pseudomorphic high electron mobility transistors (PHEMTs). Doping and electron concentrations, current flow and gate characteristic in PHEMTs are studied. The kink effect in PHEMTs is investigated emphatically as a function of temperature and doping concentration of Schottky layer. The results show that the kink effect is related mainly to the trapping/detrapping process of deep levels that lie in the top layers but not related to the impact ionization alone.