摘要
在1 100℃,以高温固相法制备了NASICON材料,但由于反应温度过高,造成材料中磷成分的损失, 因而采用气态补磷系统进行改性研究。经过大量实验,得到了比较适宜的补磷条件。通过XRD、IR、XPS对改性后的材料表征,说明材料具有单斜结构并且组分纯净。通过气态补磷,NASICON中磷的含量从3.4%上升到4.9%,从而加大了材料的电导率,器件的灵敏度也相应增加,曲线斜率由57.6上升为补磷后的65.1。
In preparation of NASICON material at 1 100℃ by high temperature solid technology, the phosphorus loses due to high temperature. To solve the problem, gaseous state phosphorus replenishment was adopted. The relatively feasible conditions were decided through experiments. XRD, IR and XPS are used to investigate the material.The results show that it is of monoclinic structure and its component is pure. By gaseous state phosphorus replenishment, the content of phosphorus in NASICON increases from 3.4% to 4.9%, Therefore, the conductivity goes higher and gas-sensing properties of the sensors made from the material have been improved. Slope increases from 57.6 to 65.1.
出处
《电子元件与材料》
CAS
CSCD
北大核心
2003年第4期19-21,共3页
Electronic Components And Materials
基金
吉林省科技厅资助项目(No.20010323)
关键词
高温固相法
NASICON
气态补磷
电导率
high temperature solid technology
NASICON
gaseous state phosphorus replenishment
conductivity
