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非晶-晶化法制备微晶铜铬真空触头材料 被引量:1

Amorphous Crystallization Process for Manufacturing CuCr Contacts
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摘要 本文提出了一种非晶 -晶化法制备微晶铜铬触头材料的新工艺。该工艺制备的铜铬触头材料 ,其组织中均匀分散着几个微米大小的铬细晶颗粒。由于经过电弧熔炼过程 ,消除了熔渗法和烧结法制造的触头中存在的大颗粒夹杂现象 ,可提高触头质量及在真空开关中运行的可靠性。另外 ,该工艺对原料铜和铬的要求可以降低 ,工艺相对简单 ,适用于各种铬含量铜铬触头材料的制造 ,是一种高质量、低成本。 A new amorphous crystallization manufacture process for making CuCr contacts materials is presented in this paper. The CuCr contacts made by this process have fine microstructures with a few microns chromium grains uniformly dispersed in copper basis, and for the action of arc melting the contacts have no impurity segregations which are commonly existed in the contacts made by P/M sintering or infiltration process, thus have high quality and are highly reliable for use in vacuum breakers. In addition, the demands for the raw materials in this process are not so strict as in P/M sintering or infiltration process, and the process is relative simple and is applicable to make CuCr contacts with various chromium contents, so it is an ideal process for producing CuCr contacts with high quality, low costs, and is suitable for large scale production of CuCr contacts.
作者 傅肃嘉
出处 《电工材料》 CAS 2003年第1期9-11,共3页 Electrical Engineering Materials
关键词 铜铬触头材料 晶化法 制造工艺 CuCr contact materials crystallization manufacture process
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  • 1Lafferty J M. Vacuum arcs, theory and application[M]. New York: Wiley, 1980.
  • 2Boxman R L. Early history of vacuum arc deposition[J]. IEEE Trans on Plasma Sei, 2001, 29 (5): 759-761.
  • 3Keidar, Michael Beilis, Isak I. Vacuum arc plasma jets and their applications[J]. IEEE International Conference on Plasma Sci, 2003, 138-146.
  • 4Ding Bingjun, Yang Zhimao, Wang Xiaotian. Influence of microstructure on dielectric strength of CuCr contact materials in a vacuum[J]. IEEE Trans on CPMT, 1996, 19A(1): 76-82.
  • 5Fink H, Gentsch D, Heimbach M. Multilayer contact material based on copper and chromium material and its interruption ability[J]. IEEE Trans on Plasma Sci, 2003, 31(5): 973-976.

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