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化学浸蚀温度对多孔硅粉理化性质的影响 被引量:7

Effect of the Tem Perature on Properties of Porous Silicon Powder inChemical Etching Process
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摘要 多孔硅是一种由纳米硅原子簇为骨架构成的海绵状结构 ,具有比表面积高、生物相容性好等特征 ,能够应用于光电子器件、化学传感、生物医学等领域。笔者以金属硅粉作为研究对象 ,采用化学浸蚀工艺制备多孔硅粉 ,利用比表面积测定仪、扫描电子显微镜、扫描隧道显微镜等研究了不同浸蚀温度制备的多孔硅粉比表面积、孔径分布、表面形貌及微结构的变化。结果表明 :化学浸蚀方法能够在金属硅粉表面形成含较多纳米尺寸孔洞的多孔硅粉 ;随着化学浸蚀温度升高 。 As a novel functional material, porous silicon constituted by a nano crystalline skeleton (quantum sponge)immersed in networks of pore, has a very large internal surface area and good biocompatibility. Because porous silicon can be easily synthesized directly by electrochemical anodization or chemical etching methods, it seems ideal for Si based opto electronic devices, biolical and chemical sensors, new material support, biocompatible materials and in vivo electronics etc.The porous silicon powder is formed by chemical etching process, and the effect of temperature on the properties of porous silicon powder is also studied. By BET, SEM and STM, the properties of the porous silicon powder such as specific surface area, structure, morphology, poresize distribution are measured. The experimental results show that there are a lot of pores with diameters in the range of 1~100 nm in porous silicon powder, and the specific surface area increase obviously with higher chemical etching temperature.
出处 《重庆大学学报(自然科学版)》 EI CAS CSCD 北大核心 2003年第3期39-41,共3页 Journal of Chongqing University
基金 国家自然科学基金 (2 0 0 0 70 0 6) 中国博士后科学基金 中国工程物理研究院化工材料所资助项目
关键词 化学浸蚀 多孔硅 纳米结构材料 chemical etching porous silicon nano structured material
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参考文献9

  • 1[1]CANHAM L T. Silicon quantum wire array fabrication by electrochemical and chemical dissolution of wafers[J]. Appl. Phys. Lett., 1990,57(10):1 046-1 048.
  • 2[2]CANHAM L T, REEVES C L, NEWEY J P, et al. Derivatized mesoporous silicon with dramatically improved stability in simulated Human blood plasma[J]. Adv. Mater., 1999,11(18): 1 505-1 507.
  • 3[3]BARBOUR J C, DIMOS D, GUILIINGER T R, et al . Control of photoluminescence from porous silicon[J]. Nanotechnology, 1992,3: 202-204.
  • 4[4]KELLY M T, CHUN J K M, BOCARSLY A B. High efficiency chemical etchant for the formation of luminescent porous silicon[J]. Appl. Phys. Lett., 1994,64(13):1 693-1 695.
  • 5[5]TSAI C, LI K H, SARATHY J. Thermal treatment studies of the photoluminescence intensity of porous silicon[J]. Appl. Phys. Lett., 1991,59(22): 2 814-2 816.
  • 6[6]FATHAUER R W, GEORGE T, KSENDZOV A, et al. Visible luminescence from silicon wafers subjected stain etches[J]. Appl. Phys. Lett., 1992,60(8):995-997.
  • 7[7]KOVALEV D, YU V, TIMOSHENKO, et al. Strong explosive interaction of hydrogenated porous silicon with oxygen at cryogenic temperatures[J]. Phys. Rev. Lett., 2001,87(6): 1-4.
  • 8[8]MIKULEC F V, KIRLAND J D, SAILOR M J.Explosive nanocrystalline porous silicon and its use in atomic emission spectroscopy[J]. Adv. Mater.,2002,14(1): 38-41.
  • 9[9]DIMOVA-MALINOVSKA D, SENDOVA-VASSILEVAM, TZENOV N, et al. Preparation of thin porous silicon layers by stain etching[J]. Thin Solid Films, 1997, 297: 9-12

同被引文献63

  • 1曾贵玉,聂福德,尹莉莎,陈娅.冲击结晶技术制备亚微米TATB粒子的研究[J].火炸药学报,2001,24(4):12-14. 被引量:21
  • 2郁卫飞,黄辉,聂福德,黄亨建,李海波,张胜涛,黎学明,陶长元.纳米多孔硅复合材料爆炸反应的实验与理论研究[J].含能材料,2004,12(A02):476-482. 被引量:14
  • 3郁卫飞,黄辉,聂福德,张启戎,李海波,李金山.纳米复合含能材料的研究进展[J].含能材料,2005,13(5):340-343. 被引量:19
  • 4黄辉,王泽山,黄亨建,李金山.新型含能材料的研究进展[J].火炸药学报,2005,28(4):9-13. 被引量:76
  • 5Meeord P, Yau S L, Bard A J. Chemiluminescence of anodized and etched silicon: Evidence for a luminescent siloxene-like layer on porous silicon[J]. Science,1992,257 : 68 -69.
  • 6Kovalev D, Timoshenko V Yu. Strong explosive interaction of hydrogenated porous silicon with oxygen at cryogenic temperatures [J]. Phys Rev Lett,2001,87(6) : 068301 -068304.
  • 7Mikulec F V ,Kirland J D ,Sailor M J. Explosive nanocrystalline porous silicon and its use in atomic emission spectroscopy[J]. Adv Mater, 2002,14(1) : 38 -41.
  • 8Plessis M du. Nanoporous silicon explosive devices [ J ]. Materials Science and Engineering B,2007,106:227 -230.
  • 9Clement D, Diener J. Highly explosive nanosilicon-based composite matefials[ J]. Phys Star Sol (a) ,2005,202(8) : 1357 -1364.
  • 10Plcssis M du. Properties of porous silicon nano-explosive devices[J]. Sensors and Actuators A,2007,135 : 666 - 674.

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