硅双栅MOS场效应晶体管的噪声特性

The Characteristics of Noise of Silicon Dual-Gate MOS Field-Effect Transistor

本文是对双栅MOS场效应晶体管(简写为DG—MOSFET'S)噪声特性的研究。其方法是把噪声源(噪声电压源、噪声电流源)并入DG—MOSFET'S的等效电路中,把DG—MOSFET'S视为无噪声器件。这样可以通过共源和共栅结构的等效电路详细的推导出DG—MOSFET'S的噪声系数。从而得出提高频率特性和降低噪声系数的方向及具体工艺措施。

The characteristic of noise is studied for dual-gate MOS field-effect transistor (DG—MOSFET'S) in this paper. We add the source of noise. (the source voltage of noise and the source electric current of noise) into the equivalent circuit of DG—MOSFET'S, and consider it as a no-noise device. The cofficient of noise of DG—MOSFET'S is derived in detail in terms of the equivalent circuit of common-source and common-gute configuration.We find the directions for improving the frequency and noise. The process is obtained, which can raise the frequency and lower the coefficiest of noise.