硅双栅MOS场效应晶体管的频率和增益特性

The Charateristie Of Frepuency and Gain Of Silicon Dual-gate MOS Field-effect Transistor

本文是通过硅双栅MOS场效应晶体管(简写为DG-MOSFET'S)的等效电路,系统的推导出DG-MOSFET'S的最高工作频率和增益与结构和工艺参数的定量关系式,指出提高频率和增益的具体办法。并充分说明DG-MOSFET'S比硅单栅MOS场效应晶体管(简写为SG-MOSFET'S)的性能更为优越,而应用更加广泛。

The paper deals with the quantitative equation of parameter of structure and techniques with the highest frequency and the gain of DG—MOSFET'S systematically derived from the silicon equivalent circuit of dual-gate MOS field-effect transistor (DG-MOSFET'S). The specific methods of the increasing frequency and the gain are pointed out and the characteristic has more advantages of the DG-MOSFET'S over SG-MOSFET'S and it is extensively applied.