摘要
本文从yau的模型出发,推导出短沟道MOSFET阈电压表达式:得到了与实验一致的结果;并发现,短沟道器件更适合于低温下工作。
The paper derives the expression of short channel MOSFET threshold voltage V_T; and obtains the results, which are in good agreement with the experiment; and discovers that short channel aevices are much suitable for operation in tower temperature.
出处
《辽宁大学学报(自然科学版)》
CAS
1988年第3期20-25,共6页
Journal of Liaoning University:Natural Sciences Edition