New Structure of Silicon—on—Insulator Metal—Oxide—Semiconductor Field Effect Transistor to Suppress the Floating Body Effect
-
1李柏承,张大伟,黄元申,倪争技,庄松林.A new structure of multi-layer phosphor package of white LED with high efficiency[J].Chinese Optics Letters,2010,8(2):221-223. 被引量:4
-
2周建华,高明辉,彭树根,邹世昌.Body-contact self-bias effect in partially depleted SOI-CMOS and alternatives to suppress floating body effect[J].Journal of Semiconductors,2011,32(2):33-37. 被引量:1
-
3CHENGXu LIUXingming WUYu WANGZhe KANGBaowei.A New Structure High—Voltage Power MOSFET with Improved Body Diode Switching Speed[J].Chinese Journal of Electronics,2003,12(2):266-269.
-
4蒋永恒,罗小蓉,李燕妃,王沛,范叶,周坤,王琦,胡夏融,张波.Eliminating the floating-body effects in a novel CMOS-compatible thin-SOI LDMOS[J].Journal of Semiconductors,2013,34(9):53-57.
-
5伍青青,陈静,罗杰馨,吕凯,余涛,柴展,王曦.Gate-to-body tunneling current model for silicon-on-insulator MOSFETs[J].Chinese Physics B,2013,22(10):604-607.
-
6JI Jiang HUANG KaiZhi JIN Liang ZHANG LiZhi ZHANG Meng.Controllable single accumulated state-sequential acquisition with low signal noise ratio[J].Science in China(Series F),2009,52(5):858-866. 被引量:5
-
7胡盛东,张波,李肇基,罗小蓉.A new structure and its analytical model for the vertical interface electric field of a partial-SOI high voltage device[J].Chinese Physics B,2010,19(3):496-502. 被引量:2
-
8伊天.Telecom Reorganization: New Structure, New Opportunities[J].世界电信,2008,21(6):4-4.
-
9张宏梅,王丹蓓,曾文进,闫敏楠.High-Efficiency Green Phosphorescent Organic Light-Emitting Diode Based on Simplified Device Structures[J].Chinese Physics Letters,2015,32(9):140-144.
-
10Kasun Bandara,Atul Sewaiwar,Yeon-Ho Chung.Efficient nonlinear companding scheme for substantial reduction in peak-to-average power ratio of OFDM[J].Journal of Systems Science & Complexity,2015,28(5):924-931.