Ⅲ-Ⅴ族化合物半导体的高能重离子辐照缺陷研究

Study on Defects Induced by High Energy Heavy Ion Irradiation in Ⅲ-Ⅴ Compound Semiconductors

用正电子湮没寿命谱技术研究了2.4×1O15/cm2、2.2×1016/cm2注量的85MeV19F离子辐照N型GaP和1.6×1016/cm 2注量的85MeV19F离子辐照P型InP所产生的辐照缺陷.结果表明:两种注量辐照在GaP中均产生较高浓度的单空位.其浓度随着辐照注量的增大而增加;辐照也在InP中产生较高浓度的单空位.

The radiation defects induced by 85MeV 19F ion of 2.4×1015/cm2 and 2.2×1016/cm2 in N-type GaP, and of 1.6×1016/cm2 in P-type InP are investigated by positron annihilation lifetime technique respectively. In irradiated N-type GaP,the monovacancies are created at both low and high fluence. and the concentration of defects gets higher as the fluence increases. For irradiated P-type InP, the defects are monovacancies,too.