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LD老化筛选及寿命测试系统 被引量:3

Laser Diode Burn-in & Life Testing System
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摘要 介绍了半导体激光二极管 (LD)老化及寿命测试的理论依据 ,给出了寿命测试的数学模型 ,并据此研制了新型LD老化筛选及寿命测试系统 ,该系统在密封抽真空充氮环境下 ,通过采集恒流工作LD的平均输出光功率随时间变化的信息及所处环境的温度 ,绘制LD的老化曲线 ,即恒流条件下的“P -t曲线” 。 The theory of Laser Diode burn-in & life testing, and mathematic model of life testing are introduced.A new type of Laser Diode burn-in & automatic life testing system was developed from these. It continuously samples the power of LD which works under automatic current control and the testing temperature under the airproof condition filled with nitrogen, plots power-time curve of LD and thus concludes the working life of LD.
出处 《计算机测量与控制》 CSCD 2003年第4期250-253,共4页 Computer Measurement &Control
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参考文献2

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  • 2中国科学技术情报研究所重庆分所.半导体器件的可靠性[R].重庆:科学技术文献出版社重庆分社,1977..

共引文献14

同被引文献17

  • 1Li H Y. Research on the Reliability of Semiconductor Lasers[D]. Changchun: The PHD Paper of Department of Electron Engineering, Jilin University (in Chinese), 1999.
  • 2Paine B M, ThomasⅢ S, Delaney M J. Low-Temperature, High-current Lifetests on InP-Based HBT'S[A]. 39th Annual International Reliability Physics Symposium[C]. America:IEEE,2001.
  • 3Fritz W J. Analysis of rapid degradation in high-power (AlGa)As laser diodes, Quantum Electronics[J]. IEEE Journal, 1990, 26: 68-74.
  • 4Michael C Y, Robert W H, Pierre M P. Degradation Mechanisms of Vertical Cavity Surface Emitting Lasers, Quantum Electronics[J]. IEEE Journal, 1996, 32:211-213.
  • 5Bellcore issue1-1998, Generic Requirments GR-468-CORE[S].
  • 6Li H Y. Research on the Reliability of Semiconductor Lasers[D]. Changchun: The PHD Paper of Department of Electron Engineering, Jilin University (in Chinese), 1999.
  • 7Paine B M, ThomasⅢ S, Delaney M J. Low-Temperature, High-current Lifetests on InP-Based HBT'S[A]. 39th Annual International Reliability Physics Symposium[C]. America:IEEE,2001.
  • 8Fritz W J. Analysis of rapid degradation in high-power (AlGa)As laser diodes, Quantum Electronics[J]. IEEE Journal, 1990, 26: 68-74.
  • 9Michael C Y, Robert W H, Pierre M P. Degradation Mechanisms of Vertical Cavity Surface Emitting Lasers, Quantum Electronics[J]. IEEE Journal, 1996, 32:211-213.
  • 10Bellcore issue1-1998, Generic Requirments GR-468-CORE[S].

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