用准平衡能带模型研究MIS结构场增强非平衡瞬态

A Study of Field-Enhanced Non-Equilibrium Transient in MIS Structure by Using Quasi-Equilibrium Energy-Band Model

本文研究了线性电压作用下MIS结构的电场增强非平衡I/V瞬态.本文除了考虑到深能级中心在非稳态条件下有随时间而改变的产生率以外,还考虑了深能级中心的电场增强产生载流子效应.在研究中我们采用了较简单的准平衡能带模型来分析有效产生区宽度.文中对于位于禁带中部的深能级中心的MIS结构给出了具体的结果.

The field-enhanced non-equilibrium Ⅰ/Ⅴ transient in MIS structure under linear voltage ramp bias has been studied theoretically. Unlike previous theoretical analyses, a time-varying and field-dependent generation rate is considered. The quasi-equilibrium energy-band model is applied in the analysis. The Ⅰ/Ⅴ characteristics have been obtained for the structure in which the deep centers locate at mid-band gaps.