摘要
研制了一种用于离子束辅助沉积光学薄膜的端部霍尔等离子体离子源 ,论述了该源的工作原理以及伏安特性。着重研究了用五栅网探针测试该源所发射的离子能量的原理和方法 ,并对测量结果进行了分析、比较。
A novel type of end Hall ion source has been successfully developed for optical thin film growth by ion beam assisted deposition (IBAD). Its operating principle and I U characteristics were discussed with special considerations given to the experimental ion energy evaluation of the ion emission by penta grid probing.The ion beam intensity and distributions were also studied
出处
《真空科学与技术》
CSCD
北大核心
2003年第1期57-60,共4页
Vacuum Science and Technology
