Si基n型GaN的欧姆接触研究

Studies of Ohmic Contact of Si Based n-GaN

GaN材料在光电子器件领域的广泛应用前景使得金属与其欧姆接触的研究成为必然。本文对Si基n型GaN上的Al单层及Ti/Al双层电极进行了研究。通过对不同退火条件下的I U特性曲线 ,X射线衍射以及二次离子质谱分析 ,揭示了界面固相反应对欧姆接触的影响 。

Al and Ti/Al metal electrodes were fabricated on surface of n type GaN films grown on Si(111)substrate and the Ohmic contact,annealed at different temperatures was studied with X ray diffraction spectroscopy (XRD),secondary ion mass spectroscopy (SIMS) and I U characteristics analysis.Interfacial reactions were found to strongly affect the structures of the Ohmic contact.We suggest that a high temperature annealing after the initial low temperature annealing (two stage annealing) may significantly improve the properties of the metal/semiconductor contact.