温度对GaAs（100）晶面上金属有机化学气相沉积TiO2薄膜生长的影响
出处
《材料保护》
CAS
CSCD
北大核心
2003年第4期77-77,共1页
Materials Protection
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2陈高芳,常桥稳,谌喜珠,叶青松,陈立桥,刘伟平.MOCVD法制备钯膜用的前驱体研究现状[J].贵金属,2012,33(1):78-83. 被引量：1
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3赵立峰,谢长生.镍的金属有机化学气相沉积[J].材料导报,2002,16(4):52-54. 被引量：5
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4许效红,王民,侯云,周爱秋,王弘.金属有机化学气相沉积反应器技术及进展[J].化工进展,2002,21(6):410-413. 被引量：11
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5A.Omri,S.D.Lambert,J.Geens,F.Bennour,M.Benzina.Synthesis, Surface Characterization and Photocatalytic Activity of TiO_2 Supported on Almond Shell Activated Carbon[J].Journal of Materials Science & Technology,2014,30(9):894-902. 被引量：4
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6黄志荣,孙启凤,罗小秋.HP40钢表面Al_2O_3薄膜制备及抑制结焦性能研究[J].材料工程,2008,36(2):18-22. 被引量：8
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7ZHANG Jian-Li LIU Jun-Lin PU Yong FANG Wen-Qing ZHANG Meng JIANG Feng-Yi.Effects of Carrier Gas on Carbon Incorporation in GaN[J].Chinese Physics Letters,2014,31(3):122-124.
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9李一,李金普,李发长,柳学全,李楠,周武平,贾成厂.碳纤维表面沉积碳化钨膜研究[J].粉末冶金技术,2012,30(3):214-218. 被引量：3
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10ZHANG JinCheng, LI ZhiMing, HAO Yue , WANG Hao & LI PeiXian Key Laboratory of Fundamental Science for National Defense on Wide Band-Gap Semiconductor Technology, School of Microelectronics, Xidian University, Xi’an 710071, China.Finite element analysis and optimization of temperature field in GaN-MOCVD reactor[J].Science China(Information Sciences),2010,53(10):2138-2143. 被引量：7
