碳化硅微观结构与其热解温度关系研究

Study of Dependence of SiC Microstructure on Pyrolysis Temperature

用金相显微镜,SEM、XRD、WDX 等研究了三氯甲基硅(MTS)为1.6%左右,氢气含最约为50%,1250—1650℃流化床热解 SiC 的表面形态、晶体结构、显微组织,孔隙及织构状态与热解温度的关系。结果表明,1550—1600℃为最佳热解温度。

The dependence of the surface topography,the crystal struc-ture,the microstructure,the pore and texture of silicon carbidepyrolytically deposited at 1250—1950℃ in a fluidized bed at～1.6%CH_3SiCl_3 and ～50% H_2 on pyrolysis temperature were studied bymetallographic microscope,SEM,XRD and WDX.The resultsshow that the optimum pyrolysis temperature is 1550—1600℃.