Fe^+辐照引起Si-SiO_2结构变化的研究

The structure modification of Si-SiO_2 irradiated by Fe^+ ion

用X射线光电子能谱仪(XPS)研究了经Fe^+辐照后Si-SiO_2表面和界面的结构、化学成分和化学状态的变化。实验结果表明,辐照后的样品在SiO_2表面产生了纯硅的微区结构,Si-SiO_2界面过渡层厚度增宽近一倍,并导致MOS电容的失效。分析了铁离子注入引起上述变化的物理机制。

In this paper the effect of the iron ion implantation on the oxide surface and SiO2-Si interface of MOS structure was studied by X-ray photo-electron spectroscopy (XPS) , and the chemical states of compounds formed were examined. The results obtained show that in the surface layers of SiO2 the pure Si micro-regions are formed under the implantation and the interface thickness is almost doubled that leads to failure of MOS capacitors. The physical and chemical mechanisms of MOS structure change by Fe+ ion implantation are also discussed and analyzed.