摘要
描述了一种多元合成研究任意中子源对半导体辐照损伤能谱等效的方法。以D-T 中子源和200~# 反应堆中子源为已知模拟源,对一个任意中子源进行了最小二乘法拟合。选择3DK2 器件做辐照实验,得到了几个中子源对硅半导体辐照损伤的初步的能谱等效结果。
A method of an arbitrary neutron spectrum equivalence for damage in semiconductor by multisource synthesis was described . An arbitrary spectrum was simulated by the least squares fit, using the D-T spectrum and the 200# spectrum as known spectra. Some 3DK2 transistors were selected for the irradiation experiment and primary neutron spectrum equivalence results were obtained.
出处
《核技术》
CAS
CSCD
北大核心
1992年第12期731-734,共4页
Nuclear Techniques
关键词
半导体物理
放射损伤
中子源
能谱
Multisource synthesis Neutron spectra equivalence Simiconductor Irradiation damage Least squares fit
