未掺杂半绝缘LECGaAs主要特性参数及其与集成电路性能的关系

The Main Characteristic Parameters of Undoped Semi-insulating LEC GaAs and Their Relations with the Performances of Integrated Circuit

利用霍尔效应、红外吸收和熔融 KOH 腐蚀的方法系统测量了φ2吋未掺杂半绝缘(SI)LECGaAs 晶体中电阻率、迁移率、深施主 EL2、浅受主碳(C)和位错分布,比较了这些参数与集成电路性能的关系,对有关问题进行了讨论.

A systematical measurement has been made for the resistivity,mobility, main deep donor EL2,shallow acceptor carbon and dislocation distribution in an undoped semi-insulating LEC GaAs crystal of 2 inches in diameter by using the methods of Hall effect,infrared absorption and preferential etching with fusing KOH.A comparison of the relationship between these parameters and the performance of integrated circuits has also been made.Some ques- tions relevant to the experimental results are discussed.