基于SiGe BiCMOS工艺的90～100 GHz单刀双掷开关

A 90～100 GHz SPDT Switch Based on SiGe BiCMOS Process

采用0.13μm SiGe BiCMOS工艺,设计了一种频带为90～100GHz的差分单刀双掷开关。首先对比分析了并联MOS管与串联MOS管,根据隔离度与损耗性能选择了并联结构。其次采用差分螺旋电感进行匹配,将双端口电感网络等效为变压器模型,显著抑制了共模信号。采用平面三维电磁仿真软件进行联合仿真。结果表明,在中心频点处,差模插入损耗为-4.1dB,共模插入损耗为-7.4dB,隔离度大于-22dB,输入反射系数S_(11)<-12dB,输出反射系数S_(22)<-10dB。芯片尺寸为570μm×140μm。

A differential single pole double throw(SPDT)switch with a band of 90 GHz to 100 GHz was designed in a 0.13μm SiGe BiCMOS process.Firstly,by comparing the insertion loss and isolation of the shunt and series switch,the shunt structure of the MOSFET was chosen.Secondly,the differential spiral inductor was used in the match network.The two-port inductance network could be equal to the model of transformer,and the common mode signal could be significantly suppressed by the analysis of simulation.Through simulating with the planar 3-D electromagnetic simulation software,the final results showed that,at the central frequency,the insertion loss of the differential-mode signal was-4.1 dB,the insertion loss of the common-mode signal was-7.4 dB,the isolation was greater than-22 dB,the input reflection coefficient S11 <-12 dB,and the output reflection coefficient S22<-10 dB.The chip area was 570μm×140μm.