用于片上ESD防护的新型高维持电压可控硅

A New High Holding Voltage SCR for on-Chip ESD Protection

为解决闩锁效应,设计了一种新颖的异质结双极晶体管触发可控硅(NHTSCR)。利用异质结晶体管串联反向异质结晶体管来分流SCR的方法,抑制电导调制效应,提高了维持电压。分析了提高NHTSCR维持电压的可行性,详述工作原理,并给出实现步骤。基于Sentaurus TCAD的仿真结果表明,该NHTSCR的维持电压从传统器件的1.34 V提高到3.72 V,在3.3 V工作电压、0.35μm SiGe BiCMOS工艺下,有效避免了闩锁效应。

In order to solve the problems of latch-up,an improved novel device named novel heterojunction bipolar transistor trigger SCR(NHTSCR)was proposed.Latch-up immunity was achieved by cascading the HBT and the reversed HBT to shunt the SCR current,which increased the holding voltage by inhibiting Webster effect.Concurrently,the feasibility of improving the holding voltage of NHTSCR was analyzed,the working principle was described,and the implementation procedures were presented.The simulation results based on Sentaurus TCAD showed that the holding voltage of the proposed device was increased to 3.72 V,while the holding voltage of traditional HTSCRs was only 1.34 V.Therefore,latch-up could be effectively avoided in a 3.3 V 0.35μm SiGe BiCMOS process.